Datasheet
Electrical specifications HVLED815PF
10/34 DocID023409 Rev 5
V
CC_OFF
Turn-off threshold
(4)
91011V
V
Z
Internal Zener voltage I
CC
= 20 mA 23 25 27 V
Supply current
I
CC_START-UP
Startup current See Figure 7 200 300 µA
Iq Quiescent current See Figure 8 11.4mA
I
CC
Operating supply current
at 50 kHz
See Figure 9 1.4 1.7 mA
Iq
(fault)
Fault quiescent current See Figure 10 250 350 µA
Startup timer
T
START
Start timer period 105 140 175 µs
T
RESTART
Restart timer period during burst
mode
420 500 700 µs
Demagnetization detector
I
Dmgb
Input bias current V
DMG
= 0.1 to 3 V 0.1 1 µA
V
DMGH
Upper clamp voltage I
DMG
= 1 mA 3.0 3.3 3.6 V
V
DMGL
Lower clamp voltage I
DMG
= - 1 mA -90 -60 -30 mV
V
DMGA
Arming voltage Positive-going edge 100 110 120 mV
V
DMGT
Triggering voltage Negative-going edge 50 60 70 mV
T
BLANK
Trigger blanking time after
MOSFET turn-off
V
COMP
1.3 V 6
µs
V
COMP
= 0.9 V 30
Line feedforward
R
FF
Equivalent feedforward resistor
I
DMG
= 1 mA 45
Transconductance error amplifier
V
REF
Voltage reference
T
J
= 25 °C 2.45 2.51 2.57
V
(3)
T
J
= -25 to 125 °C
and V
CC
= 12 V to 23 V
2.4 2.6
gm Transconductance
I
COMP
= ± 10 µA
V
COMP
= 1.65 V
1.3 2.2 3.2 ms
Gv Voltage gain
(5)
Open loop 73 dB
GB Gain-bandwidth product
(5)
500 KHz
I
COMP
Source current V
DMG
= 2.3 V, V
COMP
= 1.65 V 70 100 µA
Sink current V
DMG
= 2.7 V, V
COMP
= 1.65 V 400 750 µA
V
COMPH
Upper COMP voltage V
DMG
= 2.3 V 2.7 V
V
COMPL
Lower COMP voltage V
DMG
= 2.7 V 0.7 V
V
COMPBM
Burst mode threshold 1 V
Hys Burst mode hysteresis 65 mV
Table 5. Electrical characteristics
(1)
(2)
(continued)
Symbol Parameter Test condition Min. Typ. Max. Unit