Datasheet

Electrical characteristics L6472
12/70 DocID022729 Rev 3
t
f
Fall time
(3)
POW_SR = '00'; I
out
= +1 A 90
ns
POW_SR = '00'; I
out
= -1 A 110
POW_SR = ‘11’, I
out
= ±1 A 110
POW_SR = ‘10’, I
out
= ±1 A 260
POW_SR = ‘01’, I
load
= ±1 A 375
SR
out_r
Output rising slew rate
POW_SR = '00', I
out
= +1 A 285
V/µs
POW_SR = '00', I
out
= -1 A 360
POW_SR = ‘11’, I
out
= ±1 A 285
POW_SR = ‘10’, I
out
= ±1 A 150
POW_SR = ‘01’, I
out
= ±1 A 95
SR
out_f
Output falling slew rate
POW_SR = '00', I
out
= +1 A 320
V/µs
POW_SR = '00', I
out
= -1 A 260
POW_SR = ‘11’, I
out
= ±1 A 260
POW_SR = ‘10’, I
out
= ±1 A 110
POW_SR = ‘01’, I
out
= ±1 A 75
Deadtime and blanking
t
DT
Deadtime
(1)
POW_SR = '00' 250
ns
POW_SR = ‘11’, f
OSC
= 16 MHz 375
POW_SR = ‘10’, f
OSC
= 16 MHz 625
POW_SR = ‘01’, f
OSC
= 16 MHz 875
tblank Blanking time
(1)
POW_SR = '00' 250
ns
POW_SR = ‘11’, f
OSC
= 16 MHz 375
POW_SR = ‘10’, f
OSC
= 16 MHz 625
POW_SR = ‘01’, f
OSC
= 16 MHz 875
Source-drain diodes
V
SD,HS
High-side diode forward ON voltage I
out
= 1 A 1 1.1 V
V
SD,LS
Low-side diode forward ON voltage I
out
= 1 A 1 1.1 V
t
rrHS
High-side diode reverse recovery
time
I
out
= 1 A 30 ns
t
rrLS
Low-side diode reverse recovery time I
out
= 1 A 100 ns
Logic inputs and outputs
V
IL
Low logic level input voltage 0.8 V
V
IH
High logic level input voltage 2 V
I
IH
High logic level input current
(4)
V
IN
= 5 V 1 µA
Table 5. Electrical characteristics (continued)
Symbol Parameter Test condition Min. Typ. Max. Unit