Datasheet
Electrical characteristics L6227
8/32 DocID9453 Rev 2
4 Electrical characteristics
Table 5. Electrical characteristics
(T
amb
= 25 °C, V
s
= 48 V, unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
Sth(ON)
Turn-on threshold 5.8 6.3 6.8 V
V
Sth(OFF)
Turn-off threshold 5 5.5 6 V
I
S
Quiescent supply current
All bridges OFF;
T
j
= -25 °C to 125 °C
(1)
510mA
T
j(OFF)
Thermal shutdown temperature 165 C
Output DMOS transistors
R
DS(ON)
High-side + low-side switch ON
resistance
T
j
= 25 °C 1.47 1.69 W
T
j
= 125 °C
(1)
2.35 2.7 W
I
DSS
Leakage current
EN = low; OUT = V
S
2mA
EN = low; OUT = GND -0.3 mA
Source drain diodes
V
SD
Forward ON voltage I
SD
= 1.4 A, EN = LOW 1.15 1.3 V
t
rr
Reverse recovery time I
f
= 1.4 A 300 ns
t
fr
Forward recovery time 200 ns
Logic input
V
IL
Low level logic input voltage -0.3 0.8 V
V
IH
High level logic input voltage 2 7 V
I
IL
Low level logic input current GND logic input voltage -10 µA
I
IH
High level logic input current 7 V logic input voltage 10 µA
V
th(ON)
Turn-on input threshold 1.8 2.0 V
V
th(OFF)
Turn-off input threshold 0.8 1.3 V
V
th(HYS)
Input threshold hysteresis 0.25 0.5 V
Switching characteristics
t
D(on)EN
Enable to out turn ON delay time
(2)
I
LOAD
=1.4 A, resistive load 500 800 ns
t
D(on)IN
Input to out turn ON delay time
I
LOAD
=1.4 A, resistive load
(deadtime included)
1.9 µs
t
RISE
Output rise time
(2)
I
LOAD
= 1.4 A, resistive load 40 250 ns
t
D(off)EN
Enable to out turn OFF delay time
(2)
I
LOAD
= 1.4 A, resistive load 500 800 1000 ns
t
D(off)IN
Input to out turn OFF delay time I
LOAD
= 1.4 A, resistive load 500 800 1000 ns
t
FALL
Output fall time
(2)
I
LOAD
= 1.4 A, resistive load 40 250 ns
t
dt
Deadtime protection 0.5 1 µs
f
CP
Charge pump frequency
-25 °C <T
j
< 125 °C 0.6 1 MHz