Datasheet

DocID16923 Rev 3 3/11
ESDAXLC6-1MY2 Characteristics
11
Figure 3. Junction capacitance versus reverse
voltage applied
(typical values)
Figure 4. Junction capacitance versus
frequency (typical values)
Capacitance (fF)
0
100
200
300
400
500
600
700
800
900
1000
012345
TJ=25-C
F=200MHz
V
osc
=30mV
RMS
V R (V)
C ( F)f
0
100
200
300
400
500
600
700
800
900
1000
1 10 100 1000
F=1MHz to 3GHz
V
osc
=30mV
RMS
T
j
=25 °C
Fr quenc (MHz)ey
Figure 5. S21 (dB) attenuation Figure 6. Leakage current versus junction
temperature (typical values)
10.0M 30.0M 100.0M 300.0M 1.0G 3.0G 10.0G
14.00
12.00
-10.00
-8.00
-6.00
-
-
-
-
-
-
-
4.00
-
2.00
0.00
S21 (dB)
f (Hz)
0.01
0.1
1
10
25 35 45 55 65 75 85 95 105 115 125
T (°C)
j
I (nA)
R
V
R
=V
RM
= 3 V
Figure 7. ESD response to IEC 61000-4-2
(+ 8 kV contact discharge)
Figure 8. ESD response to IEC 61000-4-2
(-8 kV contact discharge)
20 V/div
20 ns/div
C2
20 V/div
20 ns/div
C2