Datasheet

Characteristics ESDAULC6-3BP6, ESDAULC6-3BF2
4/11
Figure 9. Junction capacitance versus
reverse voltage applied (typical
values) (SOT-666)
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values) (Flip-Chip)
0
1
012345
C(pF)
F=1MHz
V =30mV
T =25°C
OSC RMS
j
V (V)
LINE
0
1
2
012345
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
LINE
(V)
Figure 11. Relative variation of leakage
current versus junction
temperature (typical values)
(SOT-666)
Figure 12. Relative variation of leakage
current versus junction
temperature (typical values)
(Flip-Chip)
1
10
100
25 50 75 100 125 150
V =5V
R
I [T ] / I [T =25°C]
Rj Rj
T (°C)
j
1
10
100
25 50 75 100 125
I
R
[T
j
]/I
R
[T
j
=25°C]
V
R
=5V
T
j
(°C)
Figure 13. Remaining voltage after
ESDAULC6-3BP6 during ESD
15 kV positive surge (air
discharge) (SOT-666)
Figure 14. Remaining voltage after
ESDAULC6-3BF2 during ESD
15 kV positive surge (air
discharge) (Flip-Chip)
10 V/div
0.1 µs/div
10 V/div
0.1 µs/div