Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsDiodesTVS Diode

Rev 5

January 2006 1/7

ESDALC6V1W5

Quad TRANSIL™ array for data protection

Main applications

Where transient overvoltage protection in ESD

sensitive equipment is required, such as :

■ Computers

■ Printers

■ Communication systems

■ Cellular phones and accessories

■ Wireline and wireless telephone sets

■ Set top boxes

Features

■ 4 Unidirectional Transil functions

■ Breakdown voltage:

= 6.1 V minimum

■ Low leakage current: < 1 µA

■ Low capacitance: 7.5 pF at 3 V

■ Very small PCB area < 4.2 mm

typically

Description

The ESDALCxxxWx are monolithic suppressors

designed to protect components connected to

data and transmission lines against ESD.

These devices clamp the voltage just above the

logic level supply for positive transients, and to a

diode drop below ground for negative transients.

Benefits

■ High ESD protection level: up to 25 kV

■ High integration

Order codes

ESDALC6V1W5 Functional diagram

Complies with the following standards

IEC61000-4-2

MIL STD 883E - Method 3015-7 Class 3

TM: TRANSIL is a trademark of STMicroelectronics

Part Number Marking

ESDALC6V1W5 C61

Level 4 15 kV (air discharge)

8 kV(contact discharge)

25 kV HBM (Human Body Model)

SOT323-5L

I/01

I/02

GND

I/04

I/03

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Summary of content (7 pages)

PAGE 1
ESDALC6V1W5 Quad TRANSIL™ array for data protection Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as : ■ Computers ■ Printers ■ Communication systems ■ Cellular phones and accessories ■ Wireline and wireless telephone sets ■ Set top boxes Features ■ 4 Unidirectional Transil functions ■ Breakdown voltage: VBR = 6.1 V minimum ■ Low leakage current: < 1 µA ■ Low capacitance: 7.5 pF at 3 V ■ Very small PCB area < 4.
PAGE 2
ESDALC6V1W5 1 Characteristics 1 Characteristics Table 1. Absolute Ratings (Tamb = 25°C) Symbol PPP Tj Tstg Parameter Value Unit Peak pulse power (8/20 µs) 25 W Junction temperature 150 °C -55 to +150 °C 260 °C -40 to +150 °C Storage temperature range TL Maximum lead temperature for soldering during 10s Top Operating temperature range(1) 1. The values of the operating parameters versus temperature are given through curves and αT parameter. 1.
PAGE 3
ESDALC6V1W5 Figure 1. 1.1 1 Characteristics Peak power dissipation versus initial junction temperature Figure 2. Peak pulse power versus exponential pulse duration (Tj initial = 25°C) Ppp(W) Ppp[Tj initial] / Ppp [Tj initial = 25°C] 100 Tj initial = 25°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 tp(µs) Tj(°C) 0.0 10 0 25 Figure 3. 50 75 100 125 150 175 1 10 Clamping voltage versus peak pulse Figure 4. current (Tj initial = 25°C, rectangular waveform, tp = 2.
PAGE 4
ESDALC6V1W5 2 Ordering information scheme Figure 7. 2 ESD response to IEC61000-4-2 (air discharge 15 kV, positive surge) Ordering information scheme ESDA ESD Array Low capacitance Breakdown Voltage 6V1 = 6.
PAGE 5
ESDALC6V1W5 3 Package mechanical data 3 Package mechanical data 3.1 SOT323-5L package DIMENSIONS A REF. Millimeters Inches E Min. Max. Min. Max. A 0.8 1.1 0.031 0.043 A1 0 0.1 0 0.004 A2 0.8 1 0.031 0.039 b 0.15 0.3 0.006 0.012 c 0.1 0.18 0.004 0.007 D 1.8 2.2 0.071 0.086 E 1.15 1.35 0.045 0.053 e b D e A1 A2 Q1 c e HE Figure 8. 0.65 Typ. 0.025 Typ. HE 1.8 2.4 0.071 0.094 Q1 0.1 0.4 0.004 0.016 Footprint dimensions 0.3 1.0 2.9 1.0 0.
PAGE 6
ESDALC6V1W5 4 Ordering information 4 5 Ordering information Part Number Marking Package Weight Base qty Delivery mode ESDALC6V1W5 C61 SOT323-5L 5.4 mg 3000 Tape & reel Revision history Date Revision Jun-2002 4A 10-Jan-2006 6/7 5 Changes Previous issue Reformatted to current template. Figure 5: Range of Tj extended to 150 °C. Figure 6: Peak forward voltage drop versus peak forward current (typical values) added.
PAGE 7
ESDALC6V1W5 5 Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice.