Datasheet

Characteristics ESDALC5-1BM2, ESDALC5-1BT2
4/13 DocID16936 Rev 5
Figure 9. Junction capacitance versus reverse
applied voltage (typical values from I/O1 to I/O2)
Figure 10. Junction capacitance versus reverse
applied voltage (typical values from I/O2 to I/O1)
C(pF)
0
5
10
15
20
25
30
35
012345
T
j
= 25-C
F = 1MHz
Vosc = 30mV
from I/O1 to I/O2
V
R
(V)
0
5
10
15
20
25
30
35
012345
T
j
= 25-C
F = 1MHz
Vosc = 30mV
from I/O2 to I/O1
C(pF)
V
R
(V)
Figure 11. ESD response to IEC 61000-4-2
(+8 kV air discharge)
Figure 12. ESD response to IEC 61000-4-2
(-8 kV air discharge)
10 V/div
40 V
16 V
16 V
12 V
20 ns/div
V : ESD peak voltage
PP
V :clamping voltage @ 30 ns
CL
V :clamping voltage @ 60 ns
CL
V :clamping voltage @ 100 ns
CL
1
11
22
22
33
44
44
33
10 V/div
-35 V
-11 V
-11 V
-1 V
20 ns/div
V : ESD peak voltage
PP
V :clamping voltage @ 30 ns
CL
V :clamping voltage @ 60 ns
CL
V :clamping voltage @ 100 ns
CL
11
11
22
22
33
44
44
33
Figure 13. S21 attenuation measurement result Figure 14. TLP measurement
100k 1M 10M 100M 1G
- 40
- 35
- 30
- 25
- 20
- 15
- 10
- 5
0
dB
F(Hz)
I
PP
(A)
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25
from I/O2 to I/O1
fromI/O1to
I/O2
V
CL
(V)