Datasheet

Characteristics DVIULC6-4SC6
2/12 Doc ID 11599 Rev 4
1 Characteristics
Figure 1. Functional diagram
Table 1. Absolute ratings
Symbol Parameter Value Unit
V
PP
Peak pulse voltage
IEC 61000-4-2 air discharge
IEC 61000-4-2 contact discharge
MIL STD883G-Method 3015-7
±15
±15
±25
kV
P
pp
Peak pulse power 80 W
T
stg
Storage temperature range -55 to +150 °C
T
j
Operating junction temperature range -40 to +125 °C
T
L
Lead solder temperature (10 seconds duration) 260 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter Test conditions
Value
Unit
Min. Typ. Max.
I
RM
Leakage current V
RM
= 5 V - - 0.5 µA
V
BR
Breakdown voltage
between V
BUS
and GND
I
R
= 1 mA 6 - - V
V
CL
Clamping voltage
I
PP
= 1 A, t
p
= 8/20 µs
Any I/O pin to GND
--12V
I
PP
= 5 A, t
p
= 8/20 µs
Any I/O pin to GND
--17V
C
i/o-GND
Capacitance between I/O
and GND
V
R
= 0 V, F= 1 MHz - 0.85 1
pF
V
R
= 0 V, F= 825 MHz - 0.6 -
C
i/o-
GND
Capacitance variation
between I/O and GND
--0.015-
C
i/o-i/o
Capacitance between I/O
V
R
= 0 V, F= 1 MHz - 0.42 0.5
pF
V
R
= 0 V, F= 825 MHz - 0.3 -
C
i/o-i/o
Capacitance variation
between I/O
--0.007-
11
6
2
5
3
4
I/O1 I/O4
GND V
BUS
I/O2 I/O3