Datasheet

Characteristics DSILC6-4xx
2/11
1 Characteristics
Table 1. Absolute ratings
Symbol Parameter Value Unit
V
PP
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
8
15
kV
I
PP
Peak pulse current
I/O to GND
Pulse waveform = 8/20 µs
SOT-666 5
A
Flip-Chip 7
P
PP
Peak pulse power
SOT-666 90
W
Flip-Chip 120
T
stg
Storage temperature range -55 to +150 °C
T
j
Maximum junction temperature 125 °C
T
L
Lead solder temperature (10 seconds duration) 260 °C
Table 2. Electrical characteristics (T
amb
= 25° C)
Symbol Parameter
V
RM
Reverse stand-off voltage
I
RM
Leakage current
V
BR
Breakdown voltage
V
F
Forward voltage
V
CL
Clamping voltage
I
PP
Peak pulse current
Symbol Parameter Test Conditions
Value
Unit
Min Typ Max
I
RM
Leakage current V
RM
= 5 V 0.5 µA
V
BR
Breakdown voltage
between V
BUS
and GND
I
R
= 1 mA 6 V
V
F
Forward voltage I
F
= 10 mA 1 V
C
i/o-GND
Capacitance between
I/O and GND
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV
SOT-666 2 2.5
pF
Flip-Chip 2.5 3
V
I/O
= 1.65 V, V
CC
= 4.3 V,
F = 1 MHz, V
OSC
= 400 mV
SOT-666 1.5 1.8
Flip-Chip 1.8 2.0
C
i/o-i/o
Capacitance
between I/O
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV
SOT-666 1.0 1.25
Flip-Chip 1.25 1.5
V
I/O
= 1.65 V, V
CC
= 4.3 V,
F = 1 MHz, V
OSC
= 400 mV
SOT-666 0.75 0.9
Flip-Chip 0.9 1.20
ΔC
i/o-GND
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV 0.06
ΔC
i/o-i/o
V
I/O
= 0 V, F = 1 MHz, V
OSC
= 30 mV 0.05