Datasheet

Symbol Parameter Value Unit
V
RRM
Peak reverse voltage per diode 18 V
T
stg
T
j
Storage temperaturerange
Maximum junctiontemperature
-55 to + 150
150
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
=25°C).
Symbol Parameter Typ. Max. Unit
V
F
Forward voltage I
F
= 50 mA 1.3 V
I
R
Reverseleakage current per diode V
R
=15V 2
µ
A
C
Input capacitance betweenLine and GND
V
cc
= 5 V, V
RMS
= 30 mV, F = 1 MHz
(see figure 1 below)
7pF
ELECTRICALCHARACTERISTICS
(T
amb
=25°C).
TYPICALAPPLICATION
Vcc
DALC112S1
Fig 1 :
Input capacitancemeasurement
+V
CC
connected between REF1 and REF2
Input applied :
Vcc = 5V, V
RMS=30mV,F=1MHz
G
I/O
V
CC
REF2
REF1
DALC112S1
2/3