Datasheet

Characteristics DA108S1 / DA112S1
2/8
1 Characteristics
1.
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage (for one single diode) 18 V
I
PP
Repetitive peak forward current
(1)
t
p
= 8/20 µs 12 A
P Power dissipation 0.73 W
T
stg
Storage temperature range -55 to +150 °C
T
j
Operating junction temperature range -55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s. 260 °C
1. The surge is repeated after the device returns to ambient temperature
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient 170 °C/W
Table 3. Electrical characteristics(T
amb
= 25 °C)
Symbol Parameter Max. Unit
V
FP
Peak forward voltage
I
PP
= 12 A,
t
p
= 8/20 µs
DA108S1 9
V
DA112S1 12
V
F
Forward voltage I
F
= 50 mA 1.2 V
I
R
Reverse leakage current V
R
= 15 V 2 µA