Datasheet

Characteristics BTA24, BTB24, BTA25, BTA26, BTB26, T25
2/12
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine wave)
TOP3 T
c
= 105° C
25 A
D
2
PAK /
TO-220AB
T
c
= 100° C
RD91 Ins/
TOP3 Ins.
T
c
= 100° C
TO-220AB Ins. T
c
= 75° C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25° C)
F = 50 Hz t = 20 ms 250
A
F = 60 Hz t = 16.7 ms 260
I
²
tI
²
t Value for fusing t
p
= 10 ms 340 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125° C 50 A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25° C
V
DRM
/V
RRM
+ 100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 125° C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125° C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
° C
Table 3. Electrical characteristics (T
j
= 25° C, unless otherwise specified), Snubberless and
logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol Test Conditions Quadrant
T25 BTA/BTB
Unit
T2535 CW BW
I
GT
(1)
V
D
= 12 V R
L
= 33 Ω
I - II - III MAX. 35 35 50 mA
V
GT
I - II - III MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125° C
I - II - III MIN. 0.2 V
I
H
(2)
I
T
= 500 mA MAX. 50 50 75 mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
70 70 80
mA
II 80 80 100
dV/dt
(2)
V
D
= 67 %V
DRM
gate open T
j
= 125° C MIN. 500 500 1000 V/µs
(dI/dt)c
(2)
Without snubber T
j
= 125° C MIN. 13 13 22 A/ms
1. minimum I
GT
is guaranted at 5% of I
GT
max.
2. for both polarities of A2 referenced to A1.