Datasheet

BTA16, BTB16, T1610, T1635 Characteristics
Doc ID 7471 Rev 9 3/10
Table 4. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
standard (4 quadrants)
Symbol Test conditions Quadrant
BTA16 / BTB16
Unit
CB
I
GT
(1)
1. Minimum IGT is guaranted at 5% of I
GT
max
V
D
= 12 V R
L
= 33 Ω
I - II - III
IV
Max.
25
50
50
100
mA
V
GT
ALL Max. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C ALL Min. 0.2 V
I
H
(2)
2. For both polarities of A2 referenced to A1
I
T
= 500 mA Max. 25 50 mA
I
L
I
G
= 1.2 I
GT
I - III - IV
Max.
40 60
mA
II 80 120
dV/dt
(2)
V
D
= 67 %V
DRM
gate open T
j
= 125 °C Min. 200 400 V/µs
(dV/dt)c
(2)
(dI/dt)c = 7 A/ms T
j
= 125 °C Min. 5 10 V/µs
Table 5. Static characteristics
Symbol Test conditions Value Unit
V
T
(2) I
TM
= 22.5 A t
p
= 380 µs T
j
= 25 °C Max. 1.55 V
V
to
(2) Threshold voltage T
j
= 125 °C Max. 0.85 V
R
d
(2) Dynamic resistance T
j
= 125 °C Max. 25 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
Max.
5µA
T
j
= 125 °C 2 mA
Table 6. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC)
D
2
PAK / TO-220AB 1.2
°C/W
TO-220AB insulated 2.1
R
th(j-a)
Junction to ambient
S
(1)
= 1 cm
²
1. S = Copper surface under tab
D
2
PA K 45
°C/W
TO-220AB / TO-220AB
insulated
60