Datasheet

Characteristics BTA16, BTB16, T1610, T1635
2/10 Doc ID 7471 Rev 9
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current
(full sine wave)
D
2
PAK /
TO-220AB
T
c
= 100 °C
16 A
TO-220AB
insulated
T
c
= 86 °C
I
TSM
Non repetitive surge peak on-state
current
(full cycle, T
j
initial = 25 °C)
F = 50 Hz t = 20 ms 160
A
F = 60 Hz t = 16.7 ms 168
I
²
tI
²
t value for fusing t
p
= 10 ms 144 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125 °C 50 A/µs
V
DSM
/
V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25 °C
V
DRM
/V
RRM
+ 100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
Storage temperature range
-40 to + 150
T
j
Maximum operating junction temperature
-40 to + 125
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
Symbol Test conditions Quadrant T1610 T1635
BTA16 / BTB16
Unit
SW CW BW
I
GT
(1)
1. Minimum IGT is guaranted at 5% of I
GT
max
V
D
= 12 V
R
L
= 33 Ω
I - II - III Max. 10 35 10 35 50 mA
V
GT
I - II - III Max. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125 °C
I - II - III Min. 0.2 V
I
H
(2)
2. For both polarities of A2 referenced to A1
I
T
= 500 mA Max. 15 35 15 35 50 mA
I
L
I
G
= 1.2 I
GT
I - III
Max.
25 50 25 50 70
mA
II 30 60 30 60 80
dV/dt
(2)
V
D
= 67 %V
DRM
gate open
T
j
= 125 °C Min. 40 500 40 500 1000 V/µs
(dI/dt)c
(2)
(dV/dt)c = 0.1 V/µs T
j
= 125 °C
Min.
8.5 - 8.5 - -
A/ms(dV/dt)c = 10 V/µs T
j
= 125 °C 3.0 - 3.0 - -
Without snubber T
j
= 125 °C - 8.5 - 8.5 14