Datasheet
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 50 °C/W
Rth (j-c) DC Junction to case for DC BTA 1.5 °C/W
BTB 1.1
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA 1.1 °C/W
BTB 0.8
Symbol Test Conditions Quadrant Suffix Unit
AB
I
GT
V
D
=12V (DC) R
L
=33Ω Tj=25°C I-II-III MAX 100 50 mA
IV MAX 150 100
V
GT
V
D
=12V (DC) R
L
=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
V
GD
V
D
=V
DRM
R
L
=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V
tgt V
D
=V
DRM
I
G
= 500mA
dI
G
/dt = 3A/µs
Tj=25°C I-II-III-IV TYP 2.5 µs
I
L
I
G
=1.2 I
GT
Tj=25°C I-III-IV TYP 70 60 mA
II 200 180
I
H
*I
T
= 500mA gate open Tj=25°C MAX 100 80 mA
V
TM
*I
TM
= 35A tp= 380µs Tj=25°C MAX 1.7 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj=125°C MAX 6
dV/dt * Linear slope up to V
D
=67%V
DRM
gate open
Tj=125°C MIN 250 250 V/µs
(dV/dt)c * (dI/dt)c = 11.1A/ms BTA
(dI/dt)c = 13.3A/ms BTB
Tj=125°C MIN 10 V/µs
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
P
G (AV)
=1W P
GM
= 40W (tp = 20 µs) I
GM
=8A(tp=20µs) V
GM
= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA26 A/B / BTB26 B
2/5