Datasheet

BTA/BTB16 and T16 Series
5/7
Fig. 4: On-state characteristics (maximum
values)
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
200
VTM (V)
ITM (A)
Tj=25°C
Tj max
Tj max:
Vto = 0.85 V
Rd = 25 m
Ω
1 10 100 1000
0
20
40
60
80
100
120
140
160
180
Number of cycles
ITSM (A)
Non repetitive
Tj initial=25°C
Repetitive
Tc=85°C
One cycle
t=20ms
0.01 0.10 1.00 10.00
100
1000
3000
tp (ms)
ITSM (A), I²t (A²s)
Tj initial=25°C
ITSM
I²t
dI/dt limitation:
50A/µs
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
Tj(°C)
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
0.1 1.0 10.0 100.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
BW/CW/T1635
C
B
SW
0 25 50 75 100 125
0
1
2
3
4
5
6
Tj (°C)
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]