Datasheet

BTA/BTB16 and T16 Series
2/7
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
■ STANDARD (4 Quadrants)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Symbol Test Conditions Quadrant T16 BTA/BTB16
Unit
T1635 SW CW BW
I
GT
(1)
V
D
= 12 V R
L
= 33 Ω
I - II - III MAX. 35 10 35 50
mA
V
GT
I - II - III MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ Tj = 125°C
I - II - III MIN. 0.2
V
I
H
(2)
I
T
= 500 mA
MAX.35153550mA
I
L
I
G
= 1.2 I
GT
I - III MAX. 50 25 50 70 mA
II 60 30 60 80
dV/dt (2) V
D
= 67 % V
DRM
gate open Tj = 125°C
MIN. 500 40 500 1000 V/µs
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C
MIN.
- 8.5 - - A/ms
(dV/dt)c = 10 V/µs Tj = 125°C - 3.0 - -
Without snubber Tj = 125°C 8.5 - 8.5 14
Symbol Test Conditions Quadrant BTA/BTB16
Unit
CB
I
GT
(1)
V
D
= 12 V R
L
= 33 Ω
I - II - III
IV
MAX.
25
50
50
100
mA
V
GT
ALL MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ Tj = 125°C
ALL MIN.
0.2 V
I
H
(2)
I
T
= 500 mA
MAX. 25 50 mA
I
L
I
G
= 1.2 I
GT
I - III - IV MAX. 40 60 mA
II 80 120
dV/dt (2)
V
D
= 67 % V
DRM
gate open Tj = 125°C
MIN. 200 400 V/µs
(dV/dt)c(2) (dI/dt)c = 7 A/ms Tj = 125°C MIN. 5 10 V/µs
Symbol Test Conditions Value Unit
V
TM
(2) I
TM
= 22.5 A tp = 380 µs
Tj = 25°C MAX. 1.55 V
V
to
(2)
Threshold voltage Tj = 125°C MAX. 0.85 V
R
d
(2)
Dynamic resistance Tj = 125°C MAX. 25 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25°C
MAX.
5µA
Tj = 125°C 2 mA