Datasheet

Characteristics BTA12, BTB12, T12xx
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Figure 1. Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2. RMS on-state current versus case
temperature (full cycle)
P(W)
I (A)
T(RMS)
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10 11 12
I (A)
T(RMS)
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
25 50 75 100 125
T (°C)
C
BTA
BTB / T12
Figure 3. RMS on-state current versus
ambient temperature (printed
circuit board FR4, copper
thickness: 35µm) (full cycle)
Figure 4. Relative variation of thermal
impedance versus pulse duration
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I (A)
T(RMS)
T (°C)
C
DPAK
(S=1cm )
2
2
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-2
1E-1
1E+0
K=[Z /R
th th
]
t (s)
p
Z
th(j-c)
Z
th(j-a)
Figure 5. On-state characteristics (maximum
values)
Figure 6. Surge peak on-state current versus
number of cycles
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
I (A)
TM
V (V)
TM
T max.
V = 0.85V
R = 35 m
j
to
d
Ω
T=
j
T max.
j
T = 25°C
j
.
1
10 100 1000
0
10
20
30
40
50
60
70
80
90
100
110
120
130
I (A)
TSM
Number of cycles
t=20ms
One cycle
Non repetitive
T initial=25°C
j
Repetitive
T =90°C
C