Datasheet

BTA12, BTB12, T12xx Characteristics
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Table 4. Electrical characteristics (T
j
= 25°C, unless otherwise specified)
standard (4 quadrants)
Symbol Test Conditions Quadrant
BTA12 / BTB12
Unit
CB
I
GT
(1)
1. Minimum I
GT
is guaranted at 5% of I
GT
max.
V
D
= 12 V R
L
= 30 Ω
I - II - III
IV
MAX.
25
50
50
100
mA
V
GT
ALL MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125° C ALL MIN. 0.2 V
I
H
(2)
2. for both polarities of A2 referenced to A1.
I
T
= 500 mA MAX. 25 50 mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
40 50
mA
II 80 100
dV/dt
(2)
V
D
= 67% V
DRM
gate open T
j
= 125° C MIN. 200 400 V/µs
(dV/dt)c
(2)
(dI/dt)c = 5.3 A/ms T
j
= 125° C MIN. 5 10 V/µs
Table 5. Static characteristics
Symbol Test conditions Value Unit
V
T
(1)
1. for both polarities of A2 referenced to A1
I
TM
= 17 A t
p
= 380 µs T
j
= 25° C MAX. 1.55 V
V
t0
(1)
Threshold voltage T
j
= 125° C MAX. 0.85 V
R
d
(1)
Dynamic resistance T
j
= 125° C MAX. 35 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25° C
MAX.
5µA
T
j
= 125° C 1 mA
Table 6. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC)
I
2
PAK / D
2
PAK / TO-220AB 1.4
°C/W
TO-220AB insulated 2.3
R
th(j-a)
Junction to ambient S
(1)
= 1 cm
2
1. Copper surface under tab.
D
2
PA K 4 5
°C/W
TO-220AB / I
2
PA K
TO-220AB insulated
60