Datasheet

Characteristics BTA12, BTB12, T12xx
2/12
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(full sine wave)
I
2
PAK / D
2
PA K /
TO-220AB
T
c
= 105° C
12 A
TO-220AB Ins. T
c
= 90° C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25° C)
F = 50 Hz t = 20 ms 120
A
F = 60 Hz t = 16.7 ms 126
I
2
tI
2
t Value for fusing t
p
= 10 ms 78 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125° C 50 A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25° C
V
DRM
/V
RRM
+ 100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 125° C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125° C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 3. Electrical characteristics (T
j
= 25°C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
Symbol Test conditions Quadrant
T12xx BTA12 / BTB12
Unit
T1210 T1235 T1250 TW SW CW BW
I
GT
(1)
1. Minimum I
GT
is guaranted at 5% of I
GT
max
V
D
= 12 V
R
L
= 30 Ω
I - II - III MAX. 10 35 50 5 10 35 50 mA
V
GT
I - II - III MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125° C
I - II - III MIN. 0.2 V
I
H
(2)
2. for both polarities of A2 referenced to A1
I
T
= 100 mA MAX. 15 35 50 10 15 35 50 mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
25 50 70 10 25 50 70
mA
II 30 60 80 15 30 60 80
dV/dt
(2)
V
D
= 67 %V
DRM
gate open
T
j
= 125° C
MIN. 40 500 1000 20 40 500 1000 V/µs
(dI/dt)c
(2)
(dV/dt)c = 0.1 V/µs
T
j
= 125° C
MIN.
6.5 3.5 6.5
A/ms
(dV/dt)c = 10 V/µs
T
j
= 125° C
2.9 1 2.9
Without snubber
T
j
= 125° C
6.5 12 6.5 12