Datasheet

BTA/BTB12 and T12 Series
5/7
Fig. 4: On-state characteristics (maximum
values).
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
ITM (A)
Tj=25°C
Tj max
Tj max.
Vto = 0.85 V
Rd = 35 m
Ω
VTM(V)
1 10 100 1000
0
10
20
30
40
50
60
70
80
90
100
110
120
130
ITSM (A)
Non repetitive
Tj initial=25°C
Repetitive
Tc=90°C
One cycle
t=20ms
Number of cycles
0.01 0.10 1.00 10.00
10
100
1000
tp (ms)
ITSM (A), I²t (A²s)
Tj initial=25°C
ITSM
I²t
dI/dt limitation:
50A/µs
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
Tj(°C)
0.1 1.0 10.0 100.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
BW/CW/T1235
C
B
SW
(dV/dt)c (V/µs)
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0 10.0 100.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
TW
(dV/dt)c (V/µs)