Datasheet

BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
2
MAY 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA I
B
= 0 (see Note 5)
BD645
BD647
BD649
BD651
60
80
100
120
V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BD645
BD647
BD649
BD651
0.5
0.5
0.5
0.5
mA
I
CBO
Collector cut-off
current
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 70 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V I
C
= 0 (see Notes 5 and 6) 5 mA
h
FE
Forward current
transfer ratio
V
CE
= 3 V I
C
= 3 A (see Notes 5 and 6) 750
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 12 mA
I
B
= 50 mA
I
C
= 3 A
I
C
= 5 A
(see Notes 5 and 6)
2
2.5
V
V
BE(sat)
Base-emitter
saturation voltage
I
B
= 50 mA I
C
= 5 A (see Notes 5 and 6) 3 V
V
BE(on)
Base-emitter
voltage
V
CE
= 3 V I
C
= 3 A (see Notes 5 and 6) 2.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 2.0 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W