Datasheet

THERMAL DATA
R
thj-case
Thermal Resistance Junction-case 1.78
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off Current
(I
E
= 0)
for
BDX33B/34B
V
CB
= 80 V
for
BDX33C/34C
V
CB
= 100V
T
case
= 100
o
C
for
BDX33B/34B
V
CB
= 80 V
for
BDX33C/34C
V
CB
= 100 V
0.2
0.2
5
5
mA
mA
mA
mA
I
CEO
Collector Cut-off Current
(I
B
= 0)
for
BDX33B/34B
V
CE
= 40 V
for
BDX33C/34C
V
CE
= 50V
T
case
= 100
o
C
for
BDX33B/34B
V
CE
= 40 V
for
BDX33C/34C
V
CE
= 50 V
0.5
0.5
10
10
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V 5mA
V
CEO(sus)
∗ Collector-Emitter Sustaining
Voltage (I
B
= 0)
I
C
=100 mA for
BDX33B/34B
for
BDX33C/34C
80
100
V
V
V
CER(sus)
∗ Collector-emitter Sustaining
Voltage (R
BE
=100 Ω)
I
C
= 100 mA for
BDX33B/34B
for
BDX33C/34C
80
100
V
V
V
CEV(sus)
∗ Collector-emitter Sustaining
Voltage (V
BE
=-1.5 V)
I
C
= 100 mA for
BDX33B/34B
for
BDX33C/34C
80
100
V
V
V
CE(sat)
∗ Collector-emitter Saturation
Voltage
I
C
= 3 A I
B
= 6 mA 2.5 V
V
BE
∗ Base-emitter Voltage I
C
= 3 A V
CE
= 3 V 2.5 V
h
FE
∗ DC Current Gain I
C
= 3 A V
CE
= 3 V 750 V
V
F
∗ Parallel-Diode Forward
Voltage
I
F
= 8 A 4 V
h
fe
Small Signal Current Gain I
C
= 1 A V
CE
= 5 V f = 1MHz 100
∗
Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
BDX33B BDX33C BDX34B BDX34C
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