Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsBJTs & IGBTsN/A NPN NPN

July 2007 Rev 5 1/10

BD243C

BD244C

Complementary power transistors

Features

■ Complementary NPN-PNP devices

Applications

■ Power linear and switching

Description

The device is manufactured in Planar technology

with “Base Island” layout. The resulting transistor

shows exceptional high gain performance

coupled with very low saturation voltage. The

PNP type is BD244C.

Figure 1. Internal schematic diagram

TO-220

www.st.com

Table 1. Device summary

Order code Marking Package Packaging

BD243C

BD244C

BD243C

BD244C

TO-220 Tube

Summary of content (10 pages)

PAGE 1
BD243C BD244C Complementary power transistors Features ■ . Complementary NPN-PNP devices Applications ■ Power linear and switching Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. Table 1. 2 3 TO-220 Figure 1.
PAGE 2
Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2.
PAGE 3
BD243C BD244C 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless otherwise specified) Table 3. Symbol Electrical characteristics Parameter Test Conditions Min. Typ. Max. Unit ICES Collector cut-off current (V BE = 0) VCE = 100V 0.4 mA ICEO Collector cut-off current (IB = 0) VCE = 60V 0.
PAGE 4
Electrical characteristics 2.1 4/10 BD243C BD244C Typical characteristics Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7.
PAGE 5
BD243C BD244C Figure 8. Electrical characteristics Base-emitter saturation voltage (NPN) Figure 9. Base-emitter saturation voltage (PNP) Figure 10. Base-emitter saturation voltage (NPN) Figure 11. Base-emitter saturation voltage (PNP) Figure 12. BT(ON) time (NPN) Figure 13.
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Electrical characteristics BD243C BD244C Figure 14. Resistive load switching time Figure 15. Resistive load switching time (NPN) (PNP) Figure 16. Resistive load switching time Figure 17. Resistive load switching time (NPN) (PNP) Figure 18. Collector-base and collector- Figure 19.
PAGE 7
BD243C BD244C 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
PAGE 8
Package mechanical data BD243C BD244C TO-220 Mechanical data DIM. mm. MIN. MAX. 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 D 15.25 15.75 D1 1.27 E 10 e 2.40 2.70 e1 4.95 5.15 10.40 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 8/10 TYP A 28.90 øP 3.75 3.85 Q 2.65 2.
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BD243C BD244C Revision history 4 Revision history Table 4.
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BD243C BD244C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.