Datasheet

BD239C
NPN SILICON POWER TRANSISTOR
■ STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The BD239C is a silicon epitaxial-base NPN
transistor in Jedec TO-220 plastic package.
It is inteded for use in medium power linear and
switching applications.
®
INTERNAL SCHEMATIC DIAGRAM
April 1999
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CER
Collector-Emitter Voltage (R
BE
= 100Ω)
115 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 100 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 2 A
I
CM
Collector Peak Current 4 A
I
B
Base Current 0.6 A
P
tot
Total Dissipation at T
c
≤ 25
o
C
30 W
P
tot
Total Dissipation at T
amb
≤ 25
o
C
2W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
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