Datasheet

BAT 41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
November 1994
DO 35
(Glass)
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 100 V
I
F
Forward Continuous Current*
T
a
=25°C
100 mA
I
FRM
Repetitive Peak Forward Current* t
p
≤ 1s
δ ≤ 0.5
350 mA
I
FSM
Surge non Repetitive Forward Current*
t
p
≤ 10ms
750 mA
P
tot
Power Dissipation*
T
a
=95°C
100 mW
T
stg
T
j
Storage and Junction Temperature Range - 65 to +150
- 65 to +125
°C
°C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
°C
ABSOLUTE RATINGS (limiting values)
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 300
°C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
* * Pulse test: t
p
≤ 300µs δ< 2%.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
T
j
=25°CI
R
= 100µA 100 V
V
F
**
T
j
=25°CI
F
= 1mA
0.4 0.45 V
T
j
=25°CI
F
= 200mA 1
I
R
**
T
j
=25°C
V
R
= 50V 0.1
µA
T
j
= 100°C 20
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
j
=25°CV
R
= 1V f = 1MHz
2pF
DYNAMIC CHARACTERISTICS
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