Datasheet

AVS12
3/7
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 3 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) 2.3 °C/W
THERMAL RESISTANCE
TRIAC AVS12CB
Symbol Parameter
Value
Unit
Min. Max.
V
GD
V
D
=V
DRM
RL = 3.3kΩ Pulse duration > 20µs T
j
= 110°C 0.2 V
V
TM
*I
TM
= 17A t
p
= 10ms T
j
= 25°C 1.75 V
I
DRM
*V
DRM
rated Gate open T
j
= 25°C 10 µA
T
j
= 110°C 500
* For either polarity of electrode A
2
voltage with reference to electrode A
1
DC GENERAL ELECTRICAL CHARACTERISTICS
TRIAC AVS12CB
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 60Hz). (Curves are cut
off by (dI/dt)c limitation)
Fig. 2: Correlation between maximum mean
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistances heatsink + contact.