Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsDiodesSuppressor Diode Case type DO-201

July, 2005 − Rev. 7

1 Publication Order Number:

1N6267A/D

1N6267A Series

1500 Watt Mosorbt Zener

Transient Voltage

Suppressors

Unidirectional*

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high−energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetict axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

Features

• Working Peak Reverse Voltage Range − 5.8 V to 214 V

• Peak Power − 1500 Watts @ 1 ms

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 mA Above 10 V

• UL 497B for Isolated Loop Circuit Protection

• Response Time is Typically < 1 ns

• Pb−Free Packages are Available

Mechanical Characteristics

CASE:

Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16 in from the case for 10 seconds

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

AXIAL LEAD

CASE 41A

PLASTIC

A = Assembly Location

1.5KExxxA = ON Device Code

1N6xxxA = JEDEC Device Code

YY = Year

WW = Work Week

= (See Table on Page 3)

G = Pb−Free Package

(Note: Microdot may be in either location)

Cathode Anode

Device Package Shipping

†

ORDERING INFORMATION

1.5KExxxA Axial Lead 500 Units/Box

1.5KExxxARL4 Axial Lead 1500/Tape & Reel

1N6xxxA Axial Lead 500 Units/Box

1N6xxxARL4 Axial Lead 1500/Tape & Reel

MARKING DIAGRAM

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1.5KE

xxxA

1N6

xxxA

YYWWG

1N6xxxARL4G Axial Lead

(Pb−Free)

1500/Tape & Reel

1N6xxxAG 500 Units/BoxAxial Lead

(Pb−Free)

1.5KExxxARL4G 1500/Tape & ReelAxial Lead

(Pb−Free)

1.5KExxxAG 500 Units/BoxAxial Lead

(Pb−Free)

Summary of content (8 pages)

PAGE 1
N6267A Series 1500 Watt Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time.
PAGE 2
1N6267A Series MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation (Note 1) @ TL ≤ 25°C Rating PPK 1500 W Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8 in Derated above TL = 75°C PD 5.0 W 20 mW/°C Thermal Resistance, Junction−to−Lead RqJL 20 °C/W Forward Surge Current (Note 2) @ TA = 25°C IFSM 200 A TJ, Tstg − 65 to +175 °C Operating and Storage Temperature Range Maximum ratings are those values beyond which device damage can occur.
PAGE 3
1N6267A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A) Breakdown Voltage VRWM (Note 5) IR @ VRWM (Volts) (mA) Min Nom VC @ IPP (Note 7) Device† JEDEC Device† (Note 4) 1.5KE6.8A, G 1.5KE7.5A, G 1.5KE8.2A, G 1.5KE9.1A, G 1N6267A, G 1N6268A, G 1N6269A, G 1N6270A, G 5.8 6.4 7.02 7.78 1000 500 200 50 6.45 7.13 7.79 8.65 6.8 7.5 8.2 9.1 7.14 7.88 8.61 9.55 10 10 10 1 10.5 11.3 12.1 13.4 143 132 124 112 0.057 0.061 0.065 0.068 1.
PAGE 4
100 PPK , PEAK POWER (kW) NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C 1N6267A Series 100 10 1 0.1 ms 1 ms 10 ms 1 ms 100 ms 80 60 40 20 0 10 ms 0 25 50 tP, PULSE WIDTH Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 10,000 1N6267A/1.5KE6.8A through 1N6303A/1.
PAGE 5
1N6267A Series 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 1000 500 VBR(NOM) = 6.8 to 13 V 20 V 43 V 24 V TL = 25°C tP = 10 ms 200 IT , TEST CURRENT (AMPS) IT , TEST CURRENT (AMPS) 1000 500 1.5KE6.8CA through 1.5KE200CA 100 50 20 10 5 200 43 V 75 V 100 50 20 180 V 10 120 V 5 2 2 1 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) VBR(NOM) = 6.8 to 13 V 20 V 24 V TL = 25°C tP = 10 ms 0.3 0.5 0.
PAGE 6
1N6267A Series the 10 ms pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend. ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose.
PAGE 7
1N6267A Series OUTLINE DIMENSIONS MOSORB CASE 41A−04 ISSUE D B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIMENSION P. 4. 041A−01 THRU 041A−03 OBSOLETE, NEW STANDARD 041A−04. D K P P DIM A B D K P A K http://onsemi.com 7 INCHES MIN MAX 0.335 0.374 0.189 0.209 0.038 0.042 1.000 −−− −−− 0.050 MILLIMETERS MIN MAX 8.50 9.50 4.80 5.30 0.96 1.06 25.40 −−− −−− 1.
PAGE 8
1N6267A Series Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein.