Datasheet

Z04 Characteristics
3/8
Figure 1. Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2. RMS on-state current versus
ambient temperature (full cycle)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
1
2
3
4
5
6
7
P(W)
I (A)
T(RMS)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I (A)
T(RMS)
R = 100°C/W
th(j-a)
R=
th(j-a)
R
th(j-l)
T (°C)
amb
Figure 3. Relative variation of thermal
impedance versus pulse
duration
Figure 4. Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
K=[Z /R
th(j-a) th(j-a)
]
t (s)
p
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
I,I,I[T] /
GTHL j
I , I , I [T =25°C]
GTHL j
T (°C)
j
I
GT
I
H
&I
L
Figure 5. Surge peak on-state current
versus number of cycles
Figure 6. Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
p
< 10 ms and corresponding
value of I
2
t
1 10 100 1000
0
5
10
15
20
25
One cycle
t=20ms
I (A)
TSM
Number of cycles
Non repetitive
T initial = 25°C
j
Repetitive
T = 25°C
amb
0.01 0.10 1.00 10.00
1
10
100
500
t (ms)
p
I (A), I t (A s)
TSM
22
It
2
dI/dt limitation:
20A/µs
T initial = 25°C
j
I
TSM