Datasheet

Characteristics Z04
2/8
1 Characteristics
Table 2. Electrical Characteristics (Tj = 25° C, unless otherwise specified)
Symbol Test Conditions Quadrant
Z04
Unit
02 05 09 10
I
GT
(1)
1. minimum IGT is guaranted at 5% of IGT max.
V
D
= 12 V R
L
= 30 Ω
I - II - III - IV
MAX
.
351025mA
V
GT
ALL
MAX
.
1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125° C
ALL MIN. 0.2 V
I
H
(2)
2. for both polarities of A2 referenced to A1.
I
T
= 50 mA
MAX
.
351025mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX
.
6101525
mA
II 12 15 25 50
dV/dt
(2)
V
D
= 6 % V
DRM
gate open T
j
= 110° C MIN. 10 20 100 200 V/µs
(dV/dt)c
(2)
(dI/dt)c = 1.8 A/ms T
j
= 110° C MIN. 0.5 1 2 5 V/µs
Table 3. Static Characteristics
Symbol Test Conditions Value Unit
V
TM
(1)
1. for both polarities of A2 referenced to A1.
I
TM
= 5.5 A t
p
= 380 µs T
j
= 25° C MAX. 2.0 V
V
to
(1)
Threshold voltage T
j
= 125° C MAX. 0.95 V
R
d
(1)
Dynamic resistance T
j
= 125° C MAX. 180 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25° C
MAX.
5µA
T
j
= 125° C 0.5 mA
Table 4. Thermal resistances
Symbol Parameter Value Unit
R
th(j-I)
Junction to lead (AC) 15 ° C/W
R
th(j-a)
Junction to ambient 100 ° C/W