Datasheet

Z01 Series
5/7
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
Tj(°C)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
1 10 100 1000
0
1
2
3
4
5
6
7
8
9
ITSM(A)
Non repetitive
Tj initial=25°C
Repetitive
Tamb=25°C
One cycle
t=20ms
Number of cycles
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
tp (ms)
ITSM (A), I²t (A²s)
Tj initial=25°C
ITSM
I²t
dI/dt limitation:
20A/µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
ITM(A)
Tj=25°C
Tj max.
Vto= 0.95 V
Rd= 420 m
Ω
Tj=Tj max.
VTM(V)
0.1 1.0 10.0 100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
Z0103
Z0107
Z0110
Z0109
(dV/dt)c (V/µs)
0 25 50 75 100 125
0
1
2
3
4
5
6
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj (°C)