Datasheet

00.511.522.533.54
0
1
2
3
4
5
P(W)
360
O
= 180
o
=120
o
=90
o
=60
o
=30
o
DC
I (A)
T(AV)
Fig.1 :
Maximum average power dissipation ver-
sus average on-state current.
0 20 40 60 80 100 120 140
0
1
2
3
4
5-85
-95
-105
-115
-125
P (W) Tcase ( C)
o
Rth(j-c)
Rth(j-a)
Tamb ( C)
o
Fig.2 :
Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase).
0 102030405060708090100110120130
0
0.2
0.4
0.6
0.8
1
I (A)
T(AV)
=180
o
Tamb ( C)
o
Fig.3 :
Average on-state current versus case tem-
perature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp(s)
Fig.4 :
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5 :
Relative variation of gate trigger current and
holding current versus junction temperature.
1 10 100 1000
0
5
10
15
20
25
30
35
Tj initial = 25 C
o
Number of cycles
I(A)
TSM
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
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