Datasheet

Electrical specifications VNQ660SP
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2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
2.2 Thermal data
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
Supply voltage 41 V
- V
CC
Reverse DC supply voltage - 0.3 V
I
OUT
DC output current, per each channel Internally limited A
I
R
Reverse DC output current, per each channel - 15 A
I
IN
Input current +/- 10 mA
I
STAT
Status current +/- 10 mA
I
GND
DC ground current at T
C
< 25°C -200 mA
V
ESD
Electrostatic discharge (human body model: R=1.5KΩ;
C = 100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000
4000
5000
5000
V
V
V
V
E
MAX
Maximum switching energy
(L = 0.38mH; R
L
= 0Ω; V
bat
= 13.5V; T
jstart
= 150ºC; I
L
= 14A)
101 mJ
P
tot
Power dissipation at T
C
= 25°C 114 W
T
j
Junction operating temperature - 40 to 150 °C
T
stg
Storage temperature - 65 to 150 °C
E
C
Non repetitive clamping energy at T
C
= 25°C 150 mJ
Table 4. Thermal data (per island)
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 1.1
(1)
52
(2)
°C/W
R
thj-amb
Thermal resistance junction-ambient (one chip ON) 51.1
(1)
1. When mounted on a standard single-sided FR-4 board with 1cm
2
of Cu (at least 35 µm thick).
33
(2)
2. When mounted on a standard single-sided FR-4 board with 6cm
2
of Cu (at least 35 µm thick).
°C/W