Datasheet

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 28 V I
d
= 18 A
V
gen
= 10 V R
gen
= 10
(see figure 3)
100
350
650
200
200
600
1000
350
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 28 V I
d
= 18 A
V
gen
= 10 V R
gen
= 1000
(see figure 3)
500
2.7
10
4.3
800
4.2
16
6.5
ns
µs
µs
µs
(di/dt)
on
Turn-on Current Slope V
DD
= 28 V I
D
= 18 A
V
in
= 10 V R
gen
= 10
60 A/µs
Q
i
Total Input Charge V
DD
= 12 V I
D
= 18 A V
in
= 10 V 100 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
SD
() Forward On Voltage I
SD
= 18 A V
in
= 0 1.6 V
t
rr
(∗∗)
Q
rr
(∗∗)
I
RRM
(∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 18 A di/dt = 100 A/µs
V
DD
= 30 V T
j
= 25
o
C
(see test circuit, figure 5)
250
1
8
ns
µC
A
PROTECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
lim
Drain Current Limit V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
25
25
35
35
45
45
A
A
t
dlim
(∗∗) Step Response
Current Limit
V
in
= 10 V
V
in
= 5 V
35
70
60
140
µs
µs
T
jsh
(∗∗) Overtemperature
Shutdown
150
o
C
T
jrs
(∗∗) Overtemperature Reset 135
o
C
I
gf
(∗∗) Fault Sink Current V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
50
20
mA
mA
E
as
(∗∗) Single Pulse
Avalanche Energy
starting T
j
= 25
o
C V
DD
= 20 V
V
in
= 10 V R
gen
= 1 K L = 10 mH
2.5 J
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
VNP35N07
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