Datasheet

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 5 A
V
gen
= 10 V R
gen
= 10 Ω
(see figure 3)
50
80
230
100
100
160
400
180
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V I
d
= 5 A
V
gen
= 10 V R
gen
= 1000 Ω
(see figure 3)
600
0.9
3.8
1.7
900
2
6
2.5
ns
µs
µs
µs
(di/dt)
on
Turn-on Current Slope V
DD
= 15 V I
D
= 5 A
V
in
= 10 V R
gen
= 10 Ω
60 A/µs
Q
i
Total Input Charge V
DD
= 12 V I
D
= 5 A V
in
= 10 V 30 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
SD
(∗) Forward On Voltage I
SD
= 5 A V
in
= 0 1.6 V
t
rr
(∗∗)
Q
rr
(∗∗)
I
RRM
(∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 5 A di/dt = 100 A/µs
V
DD
= 30 V T
j
= 25
o
C
(see test circuit, figure 5)
125
0.3
4.8
ns
µC
A
PROTECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
lim
Drain Current Limit V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
7
7
10
10
14
14
A
A
t
dlim
(∗∗) Step Response
Current Limit
V
in
= 10 V
V
in
= 5 V
20
50
30
80
µs
µs
T
jsh
(∗∗) Overtemperature
Shutdown
150
o
C
T
jrs
(∗∗) Overtemperature Reset 135
o
C
I
gf
(∗∗) Fault Sink Current V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
50
20
mA
mA
E
as
(∗∗) Single Pulse
Avalanche Energy
starting T
j
= 25
o
C V
DD
= 20 V
V
in
= 10 V R
gen
= 1 KΩ L = 10 mH
0.4 J
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
VNP10N07
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