Datasheet

Characteristics TN1215, TS1220, TYN612, TYN812, TYN1012
4/13 Doc ID 7475 Rev 7
Figure 3. Average and D.C. on-state current
versus ambient temperature
(DPAK)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I (A)
T(AV)
T (°C)
amb
α = 180°
D.C.
DPAK
2
DPAK
Device mounted on FR4 with
recommended pad layout
1E-3 1E-2 1E-1 1E+0
0.1
0.2
0.5
1.0
K=[Z /R
th(j-c) th(j-c)
]
t (s)
p
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration (DPAK)
Figure 6. Relative variation of gate trigger
and holding current versus junction
temperature for TS1220 series
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
K=[Z /R
th(j-a) th(j-a)
]
t (s)
p
DPAK
TO-220AB / IPAK
DPAK
2
Device mounted on FR4 with
recommended pad layout
-40 -20 0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T (°C)
j
I,I,I[T] /
GTHL j
I ,I ,I [T =25°C]
GT H L j
I
GT
I
H
& I
R = 1k
L
GK
Ω
Figure 7. Relative variation of gate trigger
and holding current versus junction
temperature
Figure 8. Relative variation of holding
current versus gate-cathode
resistance (typical values)
-40 -20 0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I,I,I[T] /
GTHL j
I ,I ,I [T =25°C]
GTHL j
T (°C)
j
I
GT
I
H
& I
L
TN1215 and TYNx12 Series
1E-2 1E-1 1E+0 1E+1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R(k)
GK
Ω
I [R ] / I [ =1k ]
HGK H
ΩR
GK
T
j
= 25°C
TS1220 Series