Datasheet

TN1215, TS1220, TYN612, TYN812, TYN1012 Characteristics
Doc ID 7475 Rev 7 3/13
Table 4. Standard electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions
TN1215 TYN
Unit
B / H G x12T x12
I
GT
V
D
= 12 V R
L
= 33 Ω
MIN. 2 0.5 2
mA
MAX. 15 5 15
V
GT
MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C MIN. 0.2 V
I
H
I
T
= 500 mA Gate open MAX. 40 30 15 30 mA
I
L
I
G
= 1.2 I
GT
MAX. 80 60 30 60 mA
dV/dt V
D
= 67 % V
DRM
Gate open T
j
=125 °C MIN. 200 40 200 V/µs
V
TM
I
TM
= 24 A t
p
= 380 µs T
j
= 25 °C MAX. 1.6 V
V
t0
Threshold voltage T
j
= 125 °C MAX. 0.85 V
R
d
Dynamic resistance T
j
= 125 °C MAX. 30 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
MAX.
5µA
T
j
= 125 °C 2 mA
Table 5. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC) 1.3 °C/W
R
th(j-a)
Junction to ambient (DC)
S
(1)
= 0.5 cm
²
DPAK 70
°C/W
S
(1)
= 1 cm
²
D
2
PA K 4 5
IPAK 100
TO-220AB 60
1. S = Copper surface under tab
Figure 1. Maximum average power
dissipation versus average
on-state current
Figure 2. Average and DC on-state current
versus case temperature
0123456789
0
1
2
3
4
5
6
7
8
9
10
11
12
P(W)
I (A)
T(AV)
α = 180°
360°
α
0 25 50 75 100 125
0
2
4
6
8
10
12
14
I (A)
T(AV)
T (°C)
case
α = 180°
D.C.