Datasheet

TYNx10 Series
2/6
Tables 4: Electrical Characteristics (T
j
= 25°C, unless otherwise specified)
Table 5: Thermal Resistance
Symbol Test Conditions Value Unit
I
GT
V
D
= 12 V (D.C.) R
L
= 33 Ω
MAX. 15 mA
V
GT
MAX. 1.5 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 110°C
MIN. 0.2 V
t
gt
V
D
= V
DRM
I
G
= 40 mA dI
G
/dt = 0.5 A/µs
TYP. 2 µs
I
H
I
T
= 100 mA Gate open
MAX. 30 mA
I
L
I
G
= 1.2 x I
GT
TYP. 50 mA
dV/dt
Linear slope up to:
V
D
= 67 % V
DRM
Gate open
T
j
= 110°C
MIN. 200 V/µs
V
TM
I
TM
= 20 A tp = 380 µs
MAX. 1.6 V
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25°C
MAX.
10 µA
T
j
= 110°C
2mA
t
q
V
D
= 67 % V
DRM
I
TM
= 20 A V
R
= 25 V
dI
TM
/dt = 30 A/µs dV
D
/dt = 50 V/µs
T
j
= 110°C
TYP. 70 µs
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (D.C.) 2.5 °C/W
R
th(j-a)
Junction to ambient 60 °C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (T
amb
and T
lead
)
P(W)
I (A)
T(AV)
360°
α
α = 180°
DC
α = 120°
α = 90°
α = 30°
α = 60°
12
10
8
6
4
2
0
0123456 879
T (°C)
amb
0 20 40 60 80 100 120 140
125
120
100
105
115
110
P(W)
T (°C)
case
12
10
8
6
4
2
0
α = 180°
R = 6°C/W
th
R = 4°C/W
th
R = 2°C/W
th
R = 0°C/W
th