Datasheet

Characteristics TN805, TN815, TS820, TYN608
2/17 DocID7476 Rev 8
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter
Value
Unit
TN805
TN815
TS820
TYN608
I
T(RMS)
On-state rms current (180° conduction angle)
T
c
= 110 °C
8A
T0-220FPAB, T
c
= 91 °C
I
T(AV)
Average on-state current (180° conduction angle)
T
c
= 110 °C
5A
T0-220FPAB, T
c
= 91 °C
I
TSM
Non repetitive surge peak
on-state current
t
p
= 8.3 ms
T
j
= 25 °C
73 100
A
t
p
= 10 ms 70 95
I
2
tI
2
t value for fusing t
p
= 10 ms T
j
= 25 °C 24.5 45 A
2
S
dI/dt
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 60 Hz T
j
= 125 °C 50 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage (for TN8x5 and TYN608 only) 5 V
Table 3. Sensitive electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions TS820 Unit
I
GT
V
D
= 12 V, R
L
= 140 Ω
MAX. 200 µA
V
GT
MAX. 0.8 V
V
GD
V
D
= V
DRM,
R
L
= 3.3 kΩ, R
GK
= 220 Ω T
j
= 125 °C MIN. 0.1 V
V
RG
I
RG
= 10 µA MIN. 8 V
I
H
I
T
= 50 mA, R
GK
= 1 kΩ MAX. 5 mA
I
L
I
G
= 1 mA ,, R
GK
= 1 kΩ MAX. 6 mA
dV/dt V
D
= 65% V
DRM
, R
GK
= 220 Ω T
j
= 125 °C MIN. 5 V/µs
V
TM
I
TM
= 16 A, t
p
= 380 µs T
j
= 25 °C MAX. 1.6 V
V
t0
Threshold voltage T
j
= 125 °C MAX. 0.85 V
R
d
Dynamic resistance T
j
= 125 °C MAX. 46 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
, R
GK
= 220 Ω
T
j
= 25 °C
MAX.
5µA
T
j
= 125 °C 1 mA