Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsTriac, TO-3, 1.2kV, 40A

March 2011 Doc ID 18270 Rev 1 1/7

TPDVxx40

40 A high voltage Triacs

Features

■ On-state current (I

T(RMS)

): 40 A

■ Max. blocking voltage (V

DRM

RRM

): 1200 V

■ Gate current (I

): 200 mA

■ Commutation @ 10 V/µs: up to 142 A/ms

■ Noise immunity: 500 V/µs

■ insulated package:

– 2,500 V rms (UL recognized: E81734).

Description

The TPDVxx40 series use a high performance

alternistor technology.

Featuring very high commutation levels and high

surge current capability, this family is well adapted

to power control on inductive load (motor,

transformer...)

TOP3 insulated

Table 1. Device summary

Parameter TPDV640RG TPDV840RG TPDV1240RG

Blocking voltage V

DRM

RRM

600 V 800 V 1200 V

On-state current I

T(RMS)

40 A

Gate current I

200 mA

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Summary of content (7 pages)

PAGE 1
TPDVxx40 40 A high voltage Triacs Features A2 ■ On-state current (IT(RMS)): 40 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 200 mA ■ Commutation @ 10 V/µs: up to 142 A/ms ■ Noise immunity: 500 V/µs ■ insulated package: – 2,500 V rms (UL recognized: E81734). G Description A1 A1 A2 The TPDVxx40 series use a high performance alternistor technology.
PAGE 2
Characteristics TPDVxx40 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol IT(RMS) Parameter On-state rms current (180° conduction angle) Tc = 75 °C ITSM tp = 8.
PAGE 3
TPDVxx40 Table 4. Characteristics Gate characteristics (maximum values) Symbol Parameter PG(AV) Value Unit 1 W Average gate power dissipation PGM Peak gate power dissipation tp = 20 µs 40 W IGM Peak gate current tp = 20 µs 8 A VGM Peak positive gate voltage tp = 20 µs 16 V Value Unit Junction to ambient 50 °C/W Rth(j-c) DC Junction to case for DC 1.2 °C/W Rth(j-c) AC Junction to case for 360 °Conduction angle (F = 50 Hz) 0.9 °C/W Table 5.
PAGE 4
Characteristics Figure 5. TPDVxx40 Relative variation of gate trigger Figure 6. current and holding current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] Non repetitive surge peak on-state current versus number of cycles ITSM(A) 2.5 350 300 2 tp=10ms 250 One cycle IGT 1.5 200 Tj initial=25°C 1 150 IH & IL 100 0.5 50 Number of cycles Tj(°C) 0 0 -40 -30 -20 -10 Figure 7.
PAGE 5
TPDVxx40 2 Package information Package information ● Epoxy meets UL94,V0 ● Cooling method: C (by conduction) ● Recommended torque value: 0.9 to 1.2 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TOP3 insulated dimensions Dimensions Ref.
PAGE 6
Ordering information 3 Ordering information Table 7. 4 Ordering information Order code Marking TPDV640RG TPDV640 TPDV840RG TPDV840 TPDV1240RG TPDV1240 Package Weight TOP3 insulated 4.5 g Revision history Table 8. 6/7 TPDVxx40 Document revision history Date Revision 30-mar-2011 1 Changes First issue.
PAGE 7
TPDVxx40 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.