Datasheet

TPDVxx25 Characteristics
Doc ID 18268 Rev 2 3/7
Table 4. Gate characteristics (maximum values)
Symbol Parameter Value Unit
P
G(AV)
Average gate power dissipation 1 W
P
GM
Peak gate power dissipation t
p
= 20 µs 40 W
I
GM
Peak gate current t
p
= 20 µs 8 A
V
GM
Peak positive gate voltage t
p
= 20 µs 16 V
Table 5. Thermal resistance
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient 50 °C/W
R
th(j-c)
DC Junction to case for DC 1.5 °C/W
R
th(j-c)
AC Junction to case for 360 °Conduction angle (F = 50 Hz) 1.1 °C/W
Figure 1. Max. rms power dissipation versus
on-state rms current (F = 50Hz).
(curves limited by (dI/dt)c)
Figure 2. Max. rms power dissipation and
max. allowable temperatures
(T
amb
and T
case
) for various R
th
P(W)
I (A)
T(RMS)
α = 180°
α = 90°
α = 120°
40
30
20
10
0
0 5 10 15 20 25
α = 30°
α = 60°
180°
α
α
T (°C)
amb
0 20 40 60 80 100 120 140
125
85
95
115
105
P(W)
T (°C
)
case
40
30
20
10
0
R = 1.5°C/W
th
R = 1°C/W
th
R = 0.5°C/W
th
R = 0°C/W
th
Rth case to ambient -
Figure 3. On-state rms current versus case
temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration
I (A)
T(RMS)
30
25
20
15
10
5
0
025 7550 100 125
T (°C)
case
α = 180°
K=[Z /R
th(j-c) th(j-c)
]
t (s)
p
Z
th(j-c)
Z
th(j-a)
1.00
0.10
0.01
0.0
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3