Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsTriac, TO-3, 1.2kV, 25A

January 2012 Doc ID 18268 Rev 2 1/7

TPDVxx25

25 A high voltage Triacs

Features

■ On-state current (I

T(RMS)

): 25 A

■ Max. blocking voltage (V

DRM

RRM

): 1200 V

■ Gate current (I

): 150 mA

■ Commutation @ 10 V/µs: up to 88 A/ms

■ Noise immunity: 2 kV/µs

■ Insulated package:

– 2,500 V rms (UL recognized: E81734).

Description

The TPDVxx25 series use high performance

alternistor technology.

Featuring very high commutation levels and high

surge current capability, these devices are well

adapted to power control for inductive and

resistive loads (motor, transformer...) especially

on three-phase power grid. Targeted three-phase

applications include heating systems, motor

starters, and induction motor speed control

(especially for fans).

TOP3 insulated

Table 1. Device summary

Parameter TPDV825RG TPDV1025RG TPDV1225RG

Blocking voltage V

DRM

RRM

800 V 1000 V 1200 V

On-state current I

T(RMS)

25 A

Gate current I

150 mA

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Summary of content (7 pages)

PAGE 1
TPDVxx25 25 A high voltage Triacs Features ■ On-state current (IT(RMS)): 25 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 150 mA ■ Commutation @ 10 V/µs: up to 88 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package: – 2,500 V rms (UL recognized: E81734). A2 G A1 Description The TPDVxx25 series use high performance alternistor technology.
PAGE 2
Characteristics TPDVxx25 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter On-state rms current (180° conduction angle) IT(RMS) Tc = 85 °C ITSM tp = 8.
PAGE 3
TPDVxx25 Table 4. Characteristics Gate characteristics (maximum values) Symbol Parameter PG(AV) Value Unit 1 W Average gate power dissipation PGM Peak gate power dissipation tp = 20 µs 40 W IGM Peak gate current tp = 20 µs 8 A VGM Peak positive gate voltage tp = 20 µs 16 V Value Unit Junction to ambient 50 °C/W Rth(j-c) DC Junction to case for DC 1.5 °C/W Rth(j-c) AC Junction to case for 360 °Conduction angle (F = 50 Hz) 1.1 °C/W Table 5.
PAGE 4
Characteristics Figure 5. TPDVxx25 Relative variation of gate trigger Figure 6. current and holding current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] Non repetitive surge peak on-state current versus number of cycles ITSM(A) 2.5 200 2 t = 20 ms 150 One cycle IGT 1.5 Tj initial=25°C 100 1 IH & IL 50 0.5 Number of cycles Tj(°C) 0 0 -40 -30 -20 -10 Figure 7. 0 10 20 30 40 50 60 70 80 1 90 100 110 120 130 10 Non-repetitive surge peak on-state Figure 8.
PAGE 5
TPDVxx25 2 Package information Package information ● Epoxy meets UL94,V0 ● Cooling method: C (by conduction) ● Recommended torque value: 0.9 to 1.2 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TOP3 insulated dimensions Dimensions Ref.
PAGE 6
Ordering information 3 Ordering information Table 7. 4 Ordering information Order code Marking TPDV825RG TPDV825 TPDV1025RG TPDV1025 TPDV1225RG TPDV1225 Package Weight TOP3 insulated 4.5 g Base qty Delivery mode 30 Revision history Table 8. 6/7 TPDVxx25 Document revision history Date Revision Changes 30-Mar-2011 1 First issue. 13-Jan-2012 2 Updated dI/dt in Table 2 and added Vto and Rd to Table 3.
PAGE 7
TPDVxx25 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.