Datasheet
Characteristics T4 series
4/15 DocID7699 Rev 9
Figure 1. Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2. RMS on-state current versus case
temperature (full cycle)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
1
2
3
4
5
6
P(W)
I (A)
T(RMS)
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Figure 3. RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
Figure 4. Relative variation of thermal
impedance versus pulse duration
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WK
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5
WKMD
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WKMF
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Figure 5. On-state characteristics
(maximum values)
Figure 6. Surge peak on-state current versus
number of cycles
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
30.0
I (A)
TM
V (V)
TM
T max.
V = 0.90V
R = 120 m
j
to
d
Ω
T=
j
T max.
j
T = 25°C
j
.
1 10 100 1000
0
5
10
15
20
25
30
35
I (A)
TSM
Number of cycles
t=20ms
One cycle
Non repetitive
T initial=25°C
j
Repetitive
T =110°C
C
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