Datasheet
T4 Series
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Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 11: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
0.01 0.10 1.00 10.00
1
10
100
500
I (A), I t (A s)
TSM
22
t (ms)
p
T initial=25°C
j
I
TSM
dI/dt limitation:
50A/µs
I t
2
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I,I[T] /
GT H L j
I ,I ,I [T =25°C]
GT H L j
I
GT
I
H
& I
L
0.1 1.0 10.0 100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T405
T435
T410
0 25 50 75 100 125
0
1
2
3
4
5
6
(dI/dt)c [T ] / pecified]
j
(dI/dt)c [T s
j
T (°C)
j
0 4 8 1216202428323640
0
10
20
30
40
50
60
70
80
90
100
S(cm²)
R (°C/W)
th(j-a)