Datasheet

T4 Series
2/10
Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics (T
j
= 25°C, unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine
wave)
IPAK/DPAK/
TO-220AB
T
c
= 110°C
4A
ISOWATT220AB
T
c
= 105°C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25°C)
F = 50 Hz t = 20 ms 30
A
F = 60 Hz t = 16.7 ms 31
I
²
tI
²
t Value for fusing
t
p
= 10 ms
5.1
A
²
s
dI/dt
Critical rate of rise of on-state cur-
rent I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz
T
j
= 125°C
50 A/µs
I
GM
Peak gate current
t
p
= 20 µs T
j
= 125°C
4A
P
G(AV)
Average gate power dissipation
T
j
= 125°C
1W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Symbol Test Conditions Quadrant
T4
Unit
T405 T410 T435
I
GT
(1)
V
D
= 12 V R
L
= 30 Ω
I - II - III MAX. 5 10 35 mA
V
GT
I - II - III MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125°C
I - II - III MIN.
0.2
V
I
H
(2) I
T
= 100 mA
MAX. 10 15 35 mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
10 25 50
mA
II 15 30 60
dV/dt (2)
V
D
= 67 %V
DRM
gate open
T
j
= 125°C
MIN. 20 40 400 V/µs
(dI/dt)c (2)
(dV/dt)c = 0.1 V/µs T
j
= 125°C
MIN.
1.8 2.7 -
A/ms
(dV/dt)c = 10 V/µs T
j
= 125°C
0.9 2.0 -
Without snubber T
j
= 125°C
--2.5
Note 1: minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2: for both polarities of A2 referenced to A1.