Datasheet
STFW4N150, STP4N150, STW4N150 Electrical characteristics
Doc ID 11262 Rev 9 5/15
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
4
12
A
A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage I
SD
= 4 A, V
GS
= 0 - 2 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4 A,
di/dt = 100 A/µs
V
DD
= 45 V
Figure 21
-
510
3
12
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4 A,
di/dt = 100 A/µs
V
DD
= 45 V, T
j
= 150°C
Figure 21
-
615
4
12.6
ns
µC
A
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