Datasheet

Electrical characteristics STFW4N150, STP4N150, STW4N150
4/15 Doc ID 11262 Rev 9
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 1 mA, V
GS
= 0 1500 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125 °C
10
500
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 30 V ± 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 3 4 5 V
R
DS(on
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 2 A 5 7 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance V
DS
= 30 V, I
D
= 2 A - 3.5 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
1300
120
12
pF
pF
pF
t
d(on)
T
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 750 V, I
D
= 2 A,
R
G
= 4.7 Ω, V
GS
= 10 V
Figure 19
-
35
30
45
45
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 600 V, I
D
= 4 A,
V
GS
= 10 V
Figure 20
-
30
10
9
50 nC
nC
nC
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