Datasheet

July 2009 Doc ID 11262 Rev 9 1/15
15
STFW4N150
STP4N150, STW4N150
N-channel 1500 V, 5 , 4 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PF
Features
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF plastic packages
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest R
DS(on)
per area, unrivalled gate
charge and switching characteristics.
Figure 1. Internal schematic diagram.
Type V
DSS
R
DS(on)
max I
D
Pw
STFW4N150 1500 V < 7 4 A 63 W
STP4N150 1500 V < 7 4 A 160 W
STW4N150 1500 V < 7 4 A 160 W
TO-220
TO-247
1
2
3
1
2
3
1
2
3
TO-3PF
!-V
$
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STFW4N150 4N150 TO-3PF Tube
STP4N150 P4N150 TO-220 Tube
STW4N150 W4N150 TO-247 Tube
www.st.com
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