Datasheet

STW26NM60N
Electrical characteristics
DocID025246 Rev 2
5/12
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
20
A
I
SDM
(1)
Source-drain current
(pulsed)
-
80
A
V
SD
(2)
Forward on voltage
I
SD
= 20 A, V
GS
= 0 V
-
1.5
V
t
rr
Reverse recovery time
I
SD
= 20 A, di/dt = 100 A/µs
V
DD
= 60 V
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
370
ns
Q
rr
Reverse recovery charge
-
5.8
µC
I
RRM
Reverse recovery current
-
31.6
A
t
rr
Reverse recovery time
I
SD
= 20 A, di/dt = 100 A/µs
V
DD
= 60 V, T
j
= 150 °C
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times" )
-
450
ns
Q
rr
Reverse recovery charge
-
7.5
µC
I
RRM
Reverse recovery current
-
32.5
A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%