Datasheet

Electrical characteristics
STW26NM60N
4/12
DocID025246 Rev 2
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5: On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0 V
600
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0 V, V
DS
= 600 V
1
µA
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
(1)
100
I
GSS
Gate-body leakage
current
V
DS
= 0 V, V
GS
= ±25 V
±0.1
µA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2
3
4
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 10 A
0.135
0.165
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0 V
-
1800
-
pF
C
oss
Output capacitance
-
115
-
pF
C
rss
Reverse transfer
capacitance
-
6
-
pF
C
oss eq.
(1)
Equivalent output
capacitance
V
GS
= 0 V, V
DS
= 0 to 480 V
-
310
-
pF
Q
g
Total gate charge
V
DD
= 480 V, I
D
= 20 A,
V
GS
= 10 V
(see Figure 14: "Test circuit for
gate charge behavior")
-
60
-
nC
Q
gs
Gate-source charge
-
8.5
-
nC
Q
gd
Gate-drain charge
-
30
-
nC
R
G
Gate input resistance
f=1 MHz, I
D
=0 A
-
2.8
-
Ω
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
= 300 V, I
D
= 10 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13: "Test circuit for
resistive load switching times"
and Figure 18: "Switching time
waveform")
-
13
-
ns
t
r
Rise time
-
25
-
ns
t
d(off)
Turn-off delay time
-
85
-
ns
t
f
Fall time
-
50
-
ns